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STD80N6F6 Datasheet(PDF) 1 Page - STMicroelectronics |
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STD80N6F6 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 15 page ![]() This is information on a product in full production. January 2014 DocID023471 Rev 2 1/15 STD80N6F6 Automotive-grade N-channel 60 V, 4.4 m Ω typ., 80 A STripFET™ VI DeepGATE™ Power MOSFET in a DPAK package Datasheet - production data Figure 1. Internal schematic diagram Features • Designed for automotive applications and AEC-Q101 qualified • Low gate charge • Very low on-resistance • High avalanche ruggedness Applications • Switching applications Description This device is an N-channel Power MOSFET developed using the 6 th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest R DS(on) in all packages. Order code VDS RDS(on) max. ID STD80N6F6 60 V 5 m Ω 80 A (1) 1. Current limited by package Table 1. Device summary Order code Marking Packages Packaging STD80N6F6 80N6F6 DPAK Tape and reel www.st.com |
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