DocID026564 Rev 4

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STF10N80K5

Electrical characteristics

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The built-in back-to-back Zener diodes have been specifically designed to enhance the ESD

capability of the device. The Zener voltage is appropriate for efficient and cost-effective

intervention to protect the device integrity. These integrated Zener diodes thus eliminate the

need for external components.

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Turn-on delay time

(see Figure 18)

-

14.5

-

ns

Rise time

-

11

-

ns

Turn-off delay time

-

35

-

ns

Fall time

-

14

-

ns

Table 7. Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Source-drain current

-

9

A

Source-drain current (pulsed)

-

36

A

(1)

1.

Pulsed: pulse duration = 300µs, duty cycle 1.5%

Forward on voltage

-

1.5

V

Reverse recovery time

di/dt = 100 A/µs,

(see Figure 17)

-

370

ns

Reverse recovery charge

-

4.58

µC

Reverse recovery current

-

25

A

Reverse recovery time

di/dt=100 A/µs,

Tj=150 °C

(see Figure 17)

-

520

ns

Reverse recovery charge

-

5.88

µC

Reverse recovery current

-

22.5

A

Table 8. Gate-source Zener diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max

Unit

30

-

-

V