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CFY27 Datasheet(PDF) 3 Page - Infineon Technologies AG |
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CFY27 Datasheet(HTML) 3 Page - Infineon Technologies AG |
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3 / 8 page ![]() CFY27 Semiconductor Group 3 of 9 Draft D, September 99 Electrical Characteristics (at TA=25°C; unless otherwise specified) Parameter Symbol Values Unit min. typ. max. DC Characteristics Drain-source saturation current VDS = 2 V, VGS = 0 V IDss 150 270 420 mA Gate threshold voltage VDS = 3 V, ID = 1 mA -VGth 1.0 2.0 3.2 V Drain current at pinch-off VDS = 3 V, VGS = - 4 V IDp - < 12 60 µA Gate leakage current at pinch-off VDS = 3 V, VGS = - 4 V -IGp - < 12 30 µA Transconductance VDS = 3 V, ID = 120 mA gm120 130 160 - mS Gate leakage current at operation VDS = 3 V, ID = 120 mA -IG120 -< 3 - µA Thermal resistance junction to soldering point Rth JS - 125 - K/W |
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