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CLY32 Datasheet(PDF) 4 Page - Infineon Technologies AG |
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CLY32 Datasheet(HTML) 4 Page - Infineon Technologies AG |
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4 / 9 page ![]() CLY32 Semiconductor Group 4 of 10 Draft D, September 99 Electrical Characteristics (continued) Parameter Symbol Values Unit min. typ. max. AC Characteristics Linear power gain 1) VDS = 9 V, ID = 380 mA, f = 2.3 GHz, Pin = 0 dBm Glp dB CLY32-00 11.0 12.0 - CLY32-05 11.5 12.5 - CLY32-10 11.5 12.5 - Output power at 1dB gain compr. 1) VDS = 9 V, ID(RF off) = 380 mA, f = 2.3 GHz P1dB dBm CLY32-00 - 31.8 - CLY32-05 - 32.3 - CLY32-10 - 33.0 - Output power 1) VDS = 9 V, ID(RF off) = 380 mA, f = 2.3 GHz, Pin = 16.5 dBm Pout dBm CLY32-00 31.5 31.8 - CLY32-05 32.0 32.3 - CLY32-10 32.5 33.0 - Power added efficiency 1), 2) VDS = 9 V, ID(RF off) = 380 mA, f = 2.3 GHz, Pin = 21.5 dBm PAE % CLY32-00 40 47 - CLY32-05 45 50 - CLY32-10 45 53 - Notes.: 1) RF Power characteristics given for power matching conditions 2) Power added efficiency: PAE = (PRFout - PRFin) / PDC |
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