This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice.

June 2014

DocID026516 Rev 1

1/13

STP12N50M2

N-channel 500 V, 0.325

Ω typ.,10 A MDmesh II Plus™ low Q

g

Power MOSFET in a TO-220 package

Datasheet

Figure 1. Internal schematic diagram

Features

• Extremely low gate charge

• Lower R

DS(on)

x area vs previous generation

• Low gate input resistance

• 100% avalanche tested

• Zener-protected

Applications

• Switching applications

Description

This device is an N-channel Power MOSFET

developed using a new generation of MDmesh™

technology: MDmesh II Plus™ low Q

g

. This

revolutionary Power MOSFET associates a

vertical structure to the company's strip layout to

yield one of the world's lowest on-resistance and

gate charge. It is therefore suitable for the most

demanding high efficiency converters.

.

AM15572v1

, TAB

Order code

STP12N50M2

500 V

0.38

Ω

10 A

Table 1. Device summary

Order code

Marking

Package

Packaging

STP12N50M2

12N50M2

TO-220

Tube

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