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STS6P3LLH6 Datasheet(PDF) 3 Page - STMicroelectronics |
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STS6P3LLH6 Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 15 page ![]() DocID024219 Rev 2 3/15 STS6P3LLH6 Electrical ratings 15 1 Electrical ratings Note: For the P-channel MOSFET actual polarity of voltages and current has to be reversed. Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 30 V VGS Gate- source voltage ±20 V ID (1) 1. This value is rated according to Rthj-amb Drain current (continuous) at Tamb = 25°C 6 A ID (1) Drain current (continuous) at Tamb = 100°C 4 A IDM (2) 2. Pulse width limited by safe operating area Drain current (pulsed) 24 A PTOT (1) Total dissipation at Tamb = 25°C 2.7 W Tstg Storage temperature -55 to 150 °C Tj Operating junction temperature 150 °C Table 3. Thermal data Symbol Parameter Value Unit Rthj-amb (1) 1. When mounted on 1 inch² FR-4 board, 2 oz. Cu., t ≤ 10 sec Thermal resistance junction-amb 47 °C/W |
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