DocID024219 Rev 2

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STS6P3LLH6

Electrical characteristics

15

Note:

For the P-channel MOSFET actual polarity of voltages and current has to be reversed

Table 7. Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Source-drain current

-

6

A

(1)

1.

Pulse width limited by safe operating area.

Source-drain current

(pulsed)

-24

A

(2)

2.

Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

-

1.1

V

Reverse recovery time

-15

ns

Reverse recovery charge

-

6.5

nC

Reverse recovery current

-

0.9

A