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STL18N60M2 Datasheet(PDF) 5 Page - STMicroelectronics |
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STL18N60M2 Datasheet(HTML) 5 Page - STMicroelectronics |
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5 / 16 page ![]() DocID026517 Rev 1 5/16 STL18N60M2 Electrical characteristics 16 Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max Unit t d(on) Turn-on delay time V DD = 300 V, I D = 6.5 A, R G = 4.7 Ω, V GS = 10 V (see Figure 19) -12 - ns t r Rise time - 9 - ns t d(off) Turn-on delay time - 47 - ns t f Fall time - 10.6 - ns Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I SD Source-drain current - 9 A I SDM (1) 1. Pulse width limited by safe operating area. Source-drain current (pulsed) - 36 A V SD (2) 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5% Forward on voltage V GS = 0, I SD = 13 A - 1.6 V t rr Reverse recovery time I SD = 13 A, di/dt = 100 A/μs V DD = 60 V (see Figure 16) - 305 ns Q rr Reverse recovery charge - 3.3 μC I RRM Reverse recovery current - 22 A t rr Reverse recovery time V DD = 60 V di/dt = 100 A/μs, I SD = 13 A T j =150 °C (see Figure 16) - 417 ns Q rr Reverse recovery charge - 4.6 μC I RRM Reverse recovery current - 22.2 A |
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