STL100N8F7 datasheet(4/14 Pages) STMICROELECTRONICS

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Electrical characteristics

STL100N8F7

4/14

DocID027058 Rev 3

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4: On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

VGS = 0, ID = 250 µA

IDSS

Zero gate voltage

drain current

VGS = 0, VDS = 80 V

µA

VGS = 0, VDS = 80 V,

TC = 125 °C

µA

IGSS

Gate-body leakage

current

VDS = 0, VGS = ±20 V

±100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

2.5

4.5

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID = 10 A

5.2

6.1

mΩ

Table 5: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VGS = 0, VDS = 40 V,

f = 1 MHz

3435

Coss

Output capacitance

653

Crss

Reverse transfer

capacitance

Total gate charge

VDD = 40 V, ID = 20 A,

VGS = 10 V

(see Figure 14: "Test circuit

for gate charge behavior"

46.8

Qgs

Gate-source charge

23.4

Qgd

Gate-drain charge

11.2

Table 6: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 40 V, ID = 10 A,

RG = 4.7

Ω, VGS = 10 V

(see Figure 13: "Test circuit

for resistive load switching

times" and Figure 18:

"Switching time waveform"

Rise time

td(off)

Turn-off delay time

Fall time

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