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STL100N8F7 Datasheet(PDF) 5 Page - STMicroelectronics |
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STL100N8F7 Datasheet(HTML) 5 Page - STMicroelectronics |
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5 / 14 page ![]() STL100N8F7 Electrical characteristics DocID027058 Rev 3 5/14 Table 7: Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit VSD(1) Forward on voltage VGS = 0, ISD = 20 A - 1.2 V trr Reverse recovery time ISD = 20 A, di/dt = 100 A/µs VDD = 60 V (see Figure 15: "Test circuit for inductive load switching and diode recovery times" - 48.6 ns Qrr Reverse recovery charge - 58.6 nC IRRM Reverse recovery current - 2.4 A Notes: (1)Pulsed: pulse duration = 300 µs, duty cycle 1.5% |
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