STW70N60M2 datasheet(3/13 Pages) STMICROELECTRONICS

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DocID024327 Rev 4

3/13

STW70N60M2

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

± 25

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

IDM

(1)

Pulse width limited by safe operating area.

Drain current (pulsed)

272

PTOT

Total dissipation at TC = 25 °C

450

dv/dt (2)

ISD ≤ 68 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD= 400 V.

Peak diode recovery voltage slope

V/ns

dv/dt(3)

VDS ≤ 480 V

MOSFET dv/dt ruggedness

V/ns

Tstg

Storage temperature

- 55 to 150

°C

Max. operating junction temperature

Table 3. Thermal data

Symbol

Parameter

Value

Unit

Rthj-case Thermal resistance junction-case max

0.28

°C/W

Rthj-amb Thermal resistance junction-ambient max

°C/W

Table 4. Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not

repetitive (pulse width limited by Tjmax )

EAS

Single pulse avalanche energy (starting

Tj=25°C, ID= 10 A; VDD=50)

1500

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