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STW70N60M2 Datasheet(PDF) 5 Page - STMicroelectronics |
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STW70N60M2 Datasheet(HTML) 5 Page - STMicroelectronics |
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5 / 13 page  DocID024327 Rev 4 5/13 STW70N60M2 Electrical characteristics Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 68 A ISDM (1) 1. Pulse width limited by safe operating area. Source-drain current (pulsed) - 272 A VSD (2) 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD = 68 A, VGS = 0 - 0.98 1.6 V trr Reverse recovery time ISD = 68 A, di/dt = 100 A/µs VDD = 60 V (see Figure 18) - 520 ns Qrr Reverse recovery charge - 12 µC IRRM Reverse recovery current - 45 A trr Reverse recovery time ISD = 68 A, di/dt = 100 A/µs VDD = 60 V, Tj = 150 °C (see Figure 18) - 680 ns Qrr Reverse recovery charge - 18 µC IRRM Reverse recovery current - 50 A |
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