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STWA48N60M2 Datasheet(PDF) 7 Page - STMicroelectronics

Part # STWA48N60M2
Description  Extremely low gate charge
PDF  12 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STWA48N60M2 Datasheet(HTML) 7 Page - STMicroelectronics

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STWA48N60M2
Electrical characteristics
DocID028710 Rev 1
7/12
Figure 8: Capacitance variations
Figure 9: Output capacitance stored energy
Figure 10: Normalized gate threshold voltage vs
temperature
Figure 11: Normalized on-resistance vs
temperature
Figure 12: Normalized V(BR)DSS vs temperature
Figure 13: Source-drain diode forward
characteristics
C
100
10
1
0.1
10
VDS(V)
(pF)
1
1000
100
Ciss
Coss
Crss
10000
GIPD020920141157FSR
Eoss
8
2
0
0
VDS(V)
(µJ)
400
200
300
10
12
500
14
16
18
4
6
20
22
600
100
GIPD020920141204FSR
VGS(th)
0.6
0.5
0.4
0.3
TJ(°C)
(norm)
0.7
0
-50
50
0.9
0.8
1.0
1.2
1.1
100
ID= 250µ A
GIPD020920141328FSR
RDS(on)
2.1
1.7
1.3
0.9
TJ(°C)
(norm)
0
-50
50
2.5
0.5
100
ID= 21 A
VGS= 10V
GIPD020920141340FSR
V(BR)DSS
TJ(°C)
(norm)
-50
100
0
0.91
0.95
0.99
1.03
1.07
1.11
50
ID= 1m A
GIPD020920141346FSR
TJ=-50°C
TJ=150°C
TJ=25°C
VSD
0
16
ISD(A)
(V)
8
24
32
0
0.2
0.4
0.6
0.8
1.0
40
1.2
1.4
GIPD020920141352FSR



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