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DRV8302 Datasheet(PDF) 16 Page - Texas Instruments

Part # DRV8302
Description  Three Phase Gate Driver
PDF  32 Pages
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

DRV8302 Datasheet(HTML) 16 Page - Texas Instruments

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DS
DS
DS(on)
V
I
R
=
´
16
DRV8302
SLES267C – AUGUST 2011 – REVISED MARCH 2016
www.ti.com
Product Folder Links: DRV8302
Submit Documentation Feedback
Copyright © 2011–2016, Texas Instruments Incorporated
(1)
VCC is the logic supply to the MCU
Table 4. Buck Regulator External Components
NAME
PIN 1
PIN 2
RECOMMENDED
RRT_CLK
RT_CLK
GND (PowerPAD)
See Buck Converter
CCOMP
COMP
GND (PowerPAD)
See Buck Converter
RCCOMP
COMP
GND (PowerPAD)
See Buck Converter
RVSENSE1
PH (Filtered)
VSENSE
See Buck Converter
RVSENSE2
VSENSE
GND (PowerPAD)
See Buck Converter
RPWRGD
PWRGD
VCC
(1)
≥ 10 kΩ
LPH
PH
PH (Filtered)
See Buck Converter
DPH
PH
GND (PowerPAD)
See Buck Converter
CPH
PH (Filtered)
GND (PowerPAD)
See Buck Converter
CBST_BK
BST_BK
PH
See Buck Converter
CPVDD2
PVDD2
GND (PowerPAD)
≥4.7 µF (20%) ceramic, rated for PVDD2
CSS_TR
SS_TR
GND (PowerPAD)
See Buck Converter
7.3.4 Protection Features
The DRV8302 provides a broad range of protection features and fault condition reporting. The DRV8302 has
undervoltage and overtemperature protection for the IC. It also has overcurrent and undervoltage protection for
the MOSFET power stage. In fault shut down conditions all gate driver outputs is held low to ensure the external
MOSFETs are in a high impedance state.
7.3.4.1 Overcurrent Protection (OCP) and Reporting
To protect the power stage from damage due to excessive currents, VDS sensing circuitry is implemented in the
DRV8302. Based on the RDS(on) of the external MOSFETs and the maximum allowed IDS, a voltage threshold can
be determined to trigger the overcurrent protection features when exceeded. The voltage threshold is
programmed through the OC_ADJ pin by applying an external reference voltage with a DAC or resistor divider
from DVDD. Overcurrent protection should be used as a protection scheme only; it is not intended as a precise
current regulation scheme. There can be up to a 20% tolerance across channels for the VDS trip point.
(2)
The VDS sense circuit measures the voltage from the drain to the source of the external MOSFET while the
MOSFET is enabled. The high-side sense is between the PVDD and SH_X pins. The low-side sense is between
the SH_X and SL_X pins. Ensuring a differential, low impedance connection to the external MOSFETs for these
lines helps provide accurate VDS sensing.
There are two different overcurrent modes that can be set through the M_OC pin.
7.3.4.1.1
Current Limit Mode (M_OC = LOW)
In current limit mode the devices uses current limiting instead of device shutdown during an overcurrent event.
After the overcurrent event, the MOSFET in which the overcurrent was detected in will shut off until the next
PWM cycle. The overcurrent event will be reported through the nOCTW pin. The nOCTW pin will be held low for
a maximum 64 µs period (internal timer) or until the next PWM cycle. If another overcurrent event is triggered
from another MOSFET, during a previous overcurrent event, the reporting will continue for another 64 µs period
(internal timer will restart) or until both PWM signals cycle.
In current limit mode the device uses current limiting instead of device shutdown during an overcurrent event. In
this mode the device reports overcurrent events through the nOCTW pin. The nOCTW pin will be held low for a
maximum 64 µs period (internal timer) or until the next PWM cycle. If another overcurrent event is triggered from
another MOSFET, during a previous overcurrent event, the reporting will continue for another 64 µs period
(internal timer will restart) or until both PWM signals cycle.



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