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DRV8302 Datasheet(PDF) 16 Page - Texas Instruments |
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DRV8302 Datasheet(HTML) 16 Page - Texas Instruments |
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16 / 32 page ![]() DS DS DS(on) V I R = ´ 16 DRV8302 SLES267C – AUGUST 2011 – REVISED MARCH 2016 www.ti.com Product Folder Links: DRV8302 Submit Documentation Feedback Copyright © 2011–2016, Texas Instruments Incorporated (1) VCC is the logic supply to the MCU Table 4. Buck Regulator External Components NAME PIN 1 PIN 2 RECOMMENDED RRT_CLK RT_CLK GND (PowerPAD) See Buck Converter CCOMP COMP GND (PowerPAD) See Buck Converter RCCOMP COMP GND (PowerPAD) See Buck Converter RVSENSE1 PH (Filtered) VSENSE See Buck Converter RVSENSE2 VSENSE GND (PowerPAD) See Buck Converter RPWRGD PWRGD VCC (1) ≥ 10 kΩ LPH PH PH (Filtered) See Buck Converter DPH PH GND (PowerPAD) See Buck Converter CPH PH (Filtered) GND (PowerPAD) See Buck Converter CBST_BK BST_BK PH See Buck Converter CPVDD2 PVDD2 GND (PowerPAD) ≥4.7 µF (20%) ceramic, rated for PVDD2 CSS_TR SS_TR GND (PowerPAD) See Buck Converter 7.3.4 Protection Features The DRV8302 provides a broad range of protection features and fault condition reporting. The DRV8302 has undervoltage and overtemperature protection for the IC. It also has overcurrent and undervoltage protection for the MOSFET power stage. In fault shut down conditions all gate driver outputs is held low to ensure the external MOSFETs are in a high impedance state. 7.3.4.1 Overcurrent Protection (OCP) and Reporting To protect the power stage from damage due to excessive currents, VDS sensing circuitry is implemented in the DRV8302. Based on the RDS(on) of the external MOSFETs and the maximum allowed IDS, a voltage threshold can be determined to trigger the overcurrent protection features when exceeded. The voltage threshold is programmed through the OC_ADJ pin by applying an external reference voltage with a DAC or resistor divider from DVDD. Overcurrent protection should be used as a protection scheme only; it is not intended as a precise current regulation scheme. There can be up to a 20% tolerance across channels for the VDS trip point. (2) The VDS sense circuit measures the voltage from the drain to the source of the external MOSFET while the MOSFET is enabled. The high-side sense is between the PVDD and SH_X pins. The low-side sense is between the SH_X and SL_X pins. Ensuring a differential, low impedance connection to the external MOSFETs for these lines helps provide accurate VDS sensing. There are two different overcurrent modes that can be set through the M_OC pin. 7.3.4.1.1 Current Limit Mode (M_OC = LOW) In current limit mode the devices uses current limiting instead of device shutdown during an overcurrent event. After the overcurrent event, the MOSFET in which the overcurrent was detected in will shut off until the next PWM cycle. The overcurrent event will be reported through the nOCTW pin. The nOCTW pin will be held low for a maximum 64 µs period (internal timer) or until the next PWM cycle. If another overcurrent event is triggered from another MOSFET, during a previous overcurrent event, the reporting will continue for another 64 µs period (internal timer will restart) or until both PWM signals cycle. In current limit mode the device uses current limiting instead of device shutdown during an overcurrent event. In this mode the device reports overcurrent events through the nOCTW pin. The nOCTW pin will be held low for a maximum 64 µs period (internal timer) or until the next PWM cycle. If another overcurrent event is triggered from another MOSFET, during a previous overcurrent event, the reporting will continue for another 64 µs period (internal timer will restart) or until both PWM signals cycle. |
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