SPD30P06P datasheet(4/9 Pages) INFINEON

Part #	SPD30P06P

Description	SIPMOS Power-Transistor

PDF	9 Pages

Scroll/Zoom	100%

Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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4 / 9 page

1999-11-22

Page 4

SPD30P06P

SPU30P06P

Preliminary data

Electrical Characteristics, at

Tj = 25 °C, unless otherwise specified

Unit

Values

Symbol

Parameter

min.

typ.

max.

Dynamic Characteristics

Gate to source charge

VDD = -48 V, ID = -30 A

Qgs

5.6

3.7

Gate to drain charge

VDD = -48 V, ID = -30 A

Qgd

13.8

20.7

Gate charge total

VDD = -48 V, ID = -30 A, VGS = 0 to -10 V

Gate plateau voltage

VDD = -48 V , ID = -30 A

V(plateau)

-5.2

Parameter

Symbol

Values

Unit

min.

typ.

max.

Reverse Diode

Inverse diode continuous forward current

TC = 25 °C

-30

Inverse diode direct current,pulsed

TC = 25 °C

ISM

-120

Inverse diode forward voltage

VGS = 0 V, IF = -30

VSD

-1.3

-1.7

Reverse recovery time

VR = -30 V, IF=IS , diF/dt = 100 A/µs

trr

64.6

Reverse recovery charge

VR = -30 V, IF=lS , diF/dt = 100 A/µs

Qrr

153

230

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