LM113, LM313

www.ti.com

SNVS747A – SEPTEMBER 2011 – REVISED MAY 2013

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

Absolute Maximum Ratings

(1) (2)

100 mW

Reverse Current

50 mA

Forward Current

50 mA

Storage Temperature Range

−65°C to +150°C

Lead Temperature (Soldering, 10 seconds)

300°C

Operating Temperature Range

LM113

−55°C to+125°C

LM313

0°C to +70°C

(1)

Refer to the following RETS drawings for military specifications: RETS113-1X for LM113-1, RETS113-2X for LM113-2 or RETS113X for

LM113.

(2)

If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and

specifications.

(3)

For operating at elevated temperatures, the device must be derated based on a 150°C maximum junction and a thermal resistance of

80°C/W junction to case or 440°C/W junction to ambient.

Electrical Characteristics

(1)

Parameter

Conditions

Min

Typ

Max

Units

Reverse Breakdown Voltage

LM113/LM313

1.160

1.220

1.280

V

LM113-1

1.210

1.22

1.232

V

LM113-2

1.195

1.22

1.245

V

Reverse Breakdown Voltage Change

0.5 mA

6.0

15

mV

0.2

1.0

Ω

Reverse Dynamic Impedance

0.25

0.8

Ω

Forward Voltage Drop

0.67

1.0

V

10 Hz

≤ f ≤ 10 kHz

RMS Noise Voltage

5

μV

Reverse Breakdown Voltage Change with Current

0.5 mA

15

mV

Breakdown Voltage Temperature Coefficient

1.0 mA

0.01

%/°C

(1)

lengths less than ¼ inch. Kelvin contact sockets are also recommended. The diode should not be operated with shunt capacitances

between 200 pF and 0.1

μF, unless isolated by at least a 100Ω resistor, as it may oscillate at some currents.

Copyright © 2011–2013, Texas Instruments Incorporated

Submit Documentation Feedback

3

Product Folder Links: LM113 LM313