RHD5950 datasheet(5/8 Pages) AEROFLEX

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SCD5950 Rev G 1/14/16

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Integral Nonlinearity 1/

INL

PREF-NREF = 4.0 V

-48

LSBs

Differential Nonlinearity 1/

DNL

PREF-NREF = 4.0 V

-8.2

8.2

LSBs

Offset Error 1/OE

PREF-NREF = 4.0 V

-1

%FSR

Gain Error 1/AE

PREF-NREF = 4.0 V

-2

%FSR

Clock Frequency 1/fC

PREF-NREF = 5.0 V

MHz

Maximum Sampling Rate 2/

fSAMPLE

(MAX)

fC = 1 MHZ, 20 clocks per conversion

kSPS

High Input Leakage Current

(AIN00-AIN15) 1/ 3/

IINLK

Input under test = AvCC,

VEN = DVCC

+25°C

-5

+125°C

-50

Low Input Leakage Current

(AIN00-AIN15) 1/ 3/

IINLK

Input under test = AGND,

VEN = DVCC

+25°C

-5

+125°C

-50

Digital High Level Input Voltage

EN_H, STCNV_H, OE_H, CLK,

(AD00-AD03)

VIH

DVRP = 5.0 V 1/3.5

DVRP = 3.3 V 2/2.31

Digital Low Level Input Voltage

EN_H, STCNV_H, OE_H, CLK,

(AD00-AD03)

VIL

DVRP = 5.0 V 1/-

1.5

DVRP = 3.3 V 2/

0.99

Digital High Level Input Current

EN_H, STCNV_H, OE_H, CLK,

(AD00-AD03) 1/ 3/

IIH

Digital input under test = 5.0 V

All other digital inputs = DGND

+25°C

-5

+125°C

-50

Digital Low Level Input Current

EN_H, STCNV_H, OE_H, CLK,

(AD00-AD03) 1/ 3/

IIL

All digital inputs = DGND

+25°C

-5

+125°C

-50

Digital High Level Output Voltage

(B00-B13) 1/

VOH

DVRP = 5.0 V, VEN = DvCC, IOH = -4.0 mA

4.2

DVRP = 3.3 V, VEN = DvCC, IOH = -4.0 mA

2.7

Digital Low Level Output Voltage

(B00-B13) 1/

VOL

DVRP = 5.0 V,

VEN = DvCC,

IOL = +4.0 mA

-55°C,

+25°C

-0.6

+125°C

0.8

DVRP = 3.3 V,

VEN = DvCC,

IOL = +4.0 mA

-55°C,

+25°C

-0.6

+125°C

0.8

Digital High Level Output Current

(B00-B13) 1/

IOH

(SOURCE)

DVRP = 5.0 V, VEN = VIH

--4.0

DVRP = 3.3 V, VEN = VIH

--4.0

Digital Low Level Output Current

(B00-B13) 1/

IOL

(SINK)

DVRP = 5.0 V, VEN = VIH

-4.0

DVRP = 3.3 V, VEN = VIH

-4.0

High Output Leakage Current

(B00-B13) 1/ 3/

IOUTLK

VOE = DGND

+25°C

-5

+125°C

-50

Low Output Leakage Current

(B00-B13) 1/ 3/

IOUTLK

VOE = DGND

+25°C

-5

+125°C

-50

Notes:

1/ Specification derated to reflect Total Dose exposure to 100krad(Si) @ +25°C.

2/ Not tested. Shall be guaranteed by design, characterization, or correlation to other test parameters.

3/ These parameters for Tc = -55°C are guaranteed by design, characterization, or correlation to other test parameters.

ELECTRICAL PERFORMANCE CHARACTERISTICS

(TC = -55°C TO +125°C, +AVCC = +5.0 V, +DVCC = +5.0 V, +DRVP = +5.0 V, unless stated otherwise)

Parameter

Symbol

Conditions

Min

Max

Units

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