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IR2137 Datasheet(PDF) 4 Page - International Rectifier |
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IR2137 Datasheet(HTML) 4 Page - International Rectifier |
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4 / 9 page ![]() 4 www.irf.com IR2137: 3-PHASE GATE DRIVER WITH INTEGRATED IGBT PROTECTION International Rectifier has now introduced the IR2137 to the AC drives market. This latest High Voltage Integrated Circuit provides a monolithic solution to driving all six IGBT gate drivers, while simultaneously providing full IGBT protection and soft shutdown. In contrast to the Floating Ground Reference architecture discussed in the previous section, the IR2137 circuit enables a simple struc- ture. The differences between the two architectures are summarized in Table 2. Floating Ground System IR2137 solution Gate Drive Six Fast Optical Isolators IR2137 IGBT Protection Two Hall Effect sensors and IR2137 integrated function with a Two comparators shunt resistor and a comparator Four floating power supplies Eliminated (boot strap power) Additional Circuits Snubber circuit or discrete soft Eliminated by integrated soft shutdown shutdown circuits function Brake IGBT drive circuit with Eliminated by integrated brake IGBT an optical isolator driver circuit Table 2: Solution Comparison of Gate Drive and IGBT Protection For the IR2137 circuit, as shown in Figure 5, the IR2137 and a micro-controller ( µC) share the same ground potential – the negative DC bus potential. (This architecture is already the industry standard in the micro AC inverter drive segment). Unlike its traditional counterpart, the IR2137 circuit requires a single shunt resistor and associated comparator. With this, it can perform all modes of IGBT short circuit protection. Additionally, the IR2137 contains IGBT de-saturation logic in the circuit of each high-side gate drive, as shown in figures 6 and 7. In the event of a Ground Fault condition, the DESAT pin is activated, and the fault signal is transferred to the low side fault logic circuit. The low side fault logic then initiates the simultaneous soft shutdown of all 6 IGBTs. When the soft shutdown signal is transferred back to the high side, the active PMOS/NMOS transistor buffer goes into a high impedance mode and another weak NMOS transistor becomes active to slowly drive the gate pin low. The shutdown softness can be programmed by adding an external resistor to the SSD pin – thus allowing the user to optimize softness for the specific gate charge of the IGBT. To eliminate the dv/dt induced false triggering of the DESAT pin, there is a blanking filter delay of 2 microseconds at each high-side gate turn-on transi- tion. Figure 8 shows the oscillogram of the ground fault protection feature in the IR2137. In this measure- ment, a size 4 IGBT, IRG4BC40KD, was used in conjunction with a turn-on resistor, Rg = 33 Ω, turn- off resistor, Rg = 16 Ω, and soft turn off resistor, R SSD = 500 Ω. The top trace in Figure 8 is the IGBT gate signal (10V/div), while the middle trace is the VCE voltage (100V/div), and the bottom trace is the IGBT short circuit current (40A/div). No snubber circuit was used for this test. One can see that the de-saturation protection activates quickly and the soft shutdown feature virtually eliminates the over- shoot voltage across the collector and the emitter. |
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