BF1101 datasheet(6/15 Pages) NXP

6 / 15 page

1999 May 14

NXP Semiconductors

Product specification

N-channel dual-gate MOS-FETs

BF1101; BF1101R; BF1101WR

Fig.9

Drain current as a function of gate 1 current;

typical values.

VDS =5 V.

VG2-S =4 V.

Tj =25 C.

handbook, halfpage

MGS303

(mA)

IG1 (μA)

Fig.10 Drain current as a function of gate 1

supply voltage (= VGG); typical values.

VDS =5 V; VG2-S =4V; Tj =25 C.

RG1 =120 k (connected to VGG); see Fig.21.

handbook, halfpage

MGS304

(mA)

VGG (V)

Fig.11 Drain current as a function of gate 1 (= VGG)

and drain supply voltage; typical values.

VG2-S =4 V; Tj =25 C.

RG1 connected to VGG; see Fig.21.

handbook, halfpage

468

(mA)

VGG = VDS (V)

RG1 = 47 kΩ 68 kΩ

82 k

100 k

120 k

150 k

180 k

220 k

MGS305

VDS =5 V; Tj =25 C.

RG1 =120 k (connected to VGG); see Fig.21.

Fig.12 Drain current as a function of gate 2 voltage;

typical values.

handbook, halfpage

MGS306

(mA)

VG2-S (V)

4.5 V

4 V

3.5 V

3 V

VGG = 5 V

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