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U406 Datasheet(PDF) 1 Page - Linear Integrated Systems

Part # U406
Description  LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET AMPLIFIER
PDF  2 Pages
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Manufacturer  LINEAR [Linear Integrated Systems]
Direct Link  http://www.linearsystems.com
Logo LINEAR - Linear Integrated Systems

U406 Datasheet(HTML) 1 Page - Linear Integrated Systems

  U406 Datasheet HTML 1Page - Linear Integrated Systems U406 Datasheet HTML 2Page - Linear Integrated Systems  
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Linear Integrated Systems
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 201123 03/18/2015 Rev#A8 ECN# SST/U401 SST/U406
FEATURES
LOW DRIFT
│VGS1-2/T│= 10µV/ºC TYP.
LOW NOISE
en=6nV/Hz@10Hz TYP.
LOW PINCHOFF
VP=2.5V MAX.
ABSOLUTE MAXIMUM RATINGS NOTE 1
@ 25 °C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
-55 to +150°C
Operating Junction Temperature
-55 to +150°C
Maximum Voltage and Current for Each Transistor NOTE 1
-VGSS
Gate Voltage to Drain or Source
50V
-VDSO
Drain to Source Voltage
50V
-IG(f)
Gate Forward Current
10mA
Maximum Power Dissipation per side NOTE 2
Device Dissipation TA = 25°C
300mW
MATCHING CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
U401
U402
U403
U404
U405
U406 UNITS
CONDITIONS
│VGS1-2/T│max.
Drift vs. Temperature
10
10
25
25
40
80
µV/ºC
VDG = 10V, ID = 200µA
TA = -55ºC to +125ºC
│VGS1-2│max.
Offset Voltage
5
10
10
15
20
40
mV
VDG = 10V, ID = 200µA
ELECTRICAL CHARACTERISTICS TA = 25ºC (unless otherwise noted) NOTE 3
SYMBOL
CHARACTERISTIC
MIN.
TYP.
MAX.
UNITS
CONDITIONS
BVGSS
Breakdown Voltage
-50
-60
--
V
VDS= 0
ID= 1nA
BVG1G2
Gate-to-Gate Breakdown
±50
--
--
V
IG= ±1µA
ID= 0,
IS = 0
TRANSCONDUCTANCE
Gfss
Full Conduction
2000
--
7000
µS
VDG= 10V
VGS= 0
f = 1kHz
Gfs
Typical Operation
1000
--
2000
µS
VDG= 15V
ID= 200µA f = 1kHz
│Gfs1/Gfs2│
Mismatch
0.97
--
1.0
IDSS
Saturation Drain Current
0.5
--
10
mA
VDG= 10V
VGS= 0
IDSS1
IDSS2
Saturation Current Ratio
0.9
0.98
1.0
GATE VOLTAGE
VGS(off) or VP
Pinchoff Voltage
-0.5
--
-2.5
V
VDS= 15V
ID= 1nA
VGS
Operating Range
--
--
-2.3
V
VDS= 15V
ID= 200µA
GATE CURRENT
IG
Operating
--
-4
-15
pA
VDG= 15V
ID= 200µA
IG
High Temperature
--
--
-10
nA
TA=+125ºC
IGSS
Gate Reverse Current
--
--
-100
pA
VGS=-30v, VDS= 0V
IG1G2
Gate to Gate Isolation Current
--
--
±1.0
µA
VG1-VG2= ±50V, ID= IS= 0
SST/U401
– SST/U406
LOW NOISE LOW DRIFT
MONOLITHIC DUAL N-CHANNEL
JFET AMPLIFIER
TO-71
Top View
SOIC
Top View


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