Ultra Low Noise, High IP3

Monolithic Amplifier

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Notes

A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.

B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions.

C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled

to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp

Product Features

• Ultra Low Noise Figure, 0.8 dB typ. at 1GHz

• High IP3, 35 dBm typ. 1GHz

• Gain, 20dB typ. at 1 GHz

• Output Power, up to +20dBm typ.

• Single Positive Supply Voltage, 3V

• Small size - 3mm x 3mm x 1.14mm

• Ceramic, hermetic, Nitrogen filled

Typical Applications

• Cellular

• ISM

• GSM

• WCDMA

• LTE

• WiMAX

• WLAN

General Description

CMA-545+ is a high dynamic range, low noise, high IP3, high output power, monolithic amplifier. Manu-

factured using E-PHEMT* technology enables it to work with a single positive supply voltage. Uncon-

ditionally stable over the operating frequency. Terminal finish is Ni-pd-Au and it has repeatable perfor-

mance from lot to lot due to fully automated, tightly controlled semiconductor and assembly processes.

REV. C

M155058

CMA-545+

DJ/BT/CP

160222

0.05-6 GHz

CMA-545+

CASE STYLE: DL1721

simplified schematic and pad description

RF-IN (2)

RF-OUT

and DC (7)

BIAS (4)

Function

Pad

Number

RF-IN

2

RF input pad

RF-OUT & DC

7

RF output pad (connected to RF-OUT via blocking external cap C2, and Supply

voltage Vs via RF Choke L1)

BIAS

4

Bias pad (connected to Vs via Rbias)

GND

1,3,5,6,8, Bottom

Center Paddle

Connected to ground

*Enhancement mode Pseudomorphic High Electron Mobility Transistor.

+RoHS Compliant

The +Suffix identifies RoHS Compliance. See our web site

for RoHS Compliance methodologies and qualifications