Monolithic E-PHEMT MMIC Amplifier

Page 4 of 4

Notes

A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.

B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions.

C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled

to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp

Characterization Test Circuit

RF-IN

RF-OUT

DUT

TB-631+

I

Rbias

Vd

I

d

390nH

4

2

7

+3V

BLK-18+

Rbias

432

Ω

Bias-Tee

ZX85-12G-S+

I

ds

Vs (Supply voltage)

CMA-545+

Fig 1. Block Diagram of Test Circuit used for characterization. (DUT soldered on Mini-Circuits Characterization Test Board TB-631+) Gain, Output

power at 1dB compression (P1dB), Output IP3 (OIP3) are measured using R&S Network Analyzer ZVA-24. Noise Figure measured using Agilent’s

N5242A PNA-X microwave network analyzer.

Conditions:

1. Gain: Pin=-25 dBm

2. Output IP3 (OIP3): Two tones, spaced 1 MHz apart, 0 dBm/tone at output.

3. Vs adjusted for 3V at device (Vd), compensating loss of bias tee.

Recommended Application Circuit

(refer to evaluation board for PCB Layout and component values)

4

2

+3V (Vs)

C1

7

Paddle, 1,3,5,6,8

L1

C3

C2

RF-IN

RF-OUT

L2

Rbias

Fig 2. Recommended Application Circuit

Note: Resistance of L1, 0.1-0.2Ω typically. For component

values, please see evaluation board drawing.

432

Ω

Suggested PCB Layout (PL-365)

Product Marking

MCL

CMA-545

+YYWW

ceramic body

model