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TCR2DG19 Datasheet(PDF) 12 Page - Toshiba Semiconductor |
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TCR2DG19 Datasheet(HTML) 12 Page - Toshiba Semiconductor |
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12 / 15 page ![]() TCR2DG series 2014-03-01 12 7) Output Voltage vs. Output Current 8) Ripple Rejection Ratio vs. Frequency 9) Control Transient vs. Response VIN = 4.0 V, CIN = 0.47 μF, COUT = 1 μF IOUT = 50mA 2.0 1.0 0 1.0 0 2.0 Time t (100 μs/div) IOUT = 150mA VOUT=1.2V VOUT=3.0V VIN = 2.2 V, CIN = 0.47 μF, COUT = 1 μF IOUT = 50mA 1.0 0.5 0 1.0 0 2.0 Time t (100 μs/div) IOUT = 150mA VOUT=3.0V VOUT=1.2V Pulse width= 1ms Output current IOUT (mA) VIN = 2.2V 5.5V Pulse width= 1ms VIN = 4.0V 5.5V Output current IOUT (mA) Frequency f (Hz) VOUT=2.8V Frequency f (Hz) 0 10 100 1 k 10 k 100 k 300 k 10 20 30 40 50 60 70 80 90 VOUT=1.2V 0 10 100 1 k 10 k 100 k 300k 10 20 30 40 50 60 VIN = 2.2 V ,Vripple = 500 mVp−p CIN = none, COUT = 1μF IOUT = 10 mA, Ta = 25°C VIN = 3.8 V ,Vripple = 500 mVp−p CIN = none, COUT = 1μF IOUT = 10 mA, Ta = 25°C 3.0 |
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