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DMN3023L Datasheet(PDF) 2 Page - Diodes Incorporated |
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DMN3023L Datasheet(HTML) 2 Page - Diodes Incorporated |
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2 / 7 page  DMN3023L Document number: DS37248 Rev. 2 - 2 2 of 7 www.diodes.com August 2015 © Diodes Incorporated DMN3023L Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 6) VGS = 10V Steady State TA = +25°C TA = +70°C ID 6.2 4.9 A Pulsed Drain Current (380µs Pulse, Duty Cycle = 1%) IDM 44 A Maximum Body Diode Forward Current (Note 6) IS 1.5 A Avalanche Current (Note 7) L = 0.1mH IAS 17.5 A Avalanche Energy (Note 7) L = 0.1mH EAS 15.2 mJ Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 5) TA = +25°C PD 0.9 W TA = +70°C 0.6 Thermal Resistance, Junction to Ambient (Note 5) Steady state RθJA 144 °C/W t<10s 103 Total Power Dissipation (Note 6) TA = +25°C PD 1.3 W TA = +70°C 0.8 Thermal Resistance, Junction to Ambient (Note 6) Steady state RθJA 97 °C/W t<10s 70 Thermal Resistance, Junction to Case (Note 6) RθJC 24 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS 30 V VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current IDSS 1 µA VDS = 24V, VGS = 0V Gate-Body Leakage IGSS ±10 µA VGS = ±16V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(TH) 0.8 1.8 V VDS = VGS, ID = 250µA Static Drain-Source On-Resistance RDS(ON) 25 28 68 m Ω VGS = 10V, ID = 4.0A VGS = 4.5V, ID =3.5A VGS = 2.5V, ID =2.5A Source-Drain Diode Forward Voltage VSD 1.2 V VGS = 0V, IS = 1A DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Ciss 873 pF VDS = 15V, VGS = 0V f = 1.0MHz Output Capacitance Coss 121 pF Reverse Transfer Capacitance Crss 67 pF Gate Resistance Rg — 77 — Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = 10V) Qg 18.4 nC VDS = 15V, ID = 4A Total Gate Charge (VGS = 4.5V) Qg 8.3 nC Gate-Source Charge Qgs 2.2 nC Gate-Drain Charge Qgd 2.5 nC Turn-On Delay Time tD(ON) 17 ns VDD = 15V, VGS = 10V, RL = 15Ω, RG = 6Ω Turn-On Rise Time tR 18 ns Turn-Off Delay Time tD(OFF) 231 ns Turn-Off Fall Time tF 70 ns Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. |
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