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DMN3023L Datasheet(PDF) 4 Page - Diodes Incorporated

Part # DMN3023L
Description  N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  7 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMN3023L Datasheet(HTML) 4 Page - Diodes Incorporated

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DMN3023L
Document number: DS37248 Rev. 2 - 2
4 of 7
www.diodes.com
August 2015
© Diodes Incorporated
DMN3023L
0.01
0.015
0.02
0.025
0.03
0.035
0.04
-50
-25
0
25
50
75
100
125
150
T
J, JUNCTION TEMPERATURE (℃)
Figure 7 On-Resistance Variation with Temperature
VGS=10V, ID=4A
VGS=4.5V, ID=3.5A
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-50
-25
0
25
50
75
100
125
150
T
J, JUNCTION TEMPERATURE (℃)
Figure 8 Gate Threshold Variation vs Ambient
Temperature
ID=1mA
ID=250mA
0
2
4
6
8
10
12
14
16
18
20
0
0.3
0.6
0.9
1.2
1.5
V
SD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
VGS=0V, TA=-55℃
VGS=0V, TA=+25℃
VGS=0V, TA=+85℃
VGS=0V, TA=+125℃
VGS=0V, TA=+150℃
0.1
1
10
100
1000
10000
0
5
10
15
20
25
30
V
DS, Drain-SOURCE VOLTAGE (V)
Figure 10 Typical Drain-Source Leakge Current vs
Voltage
TA=+25℃
TA=+85℃
TA=+125℃
TA=+150℃
10
100
1000
10000
0
5
10
15
20
25
30
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 11 Typical Junction Capacitance
f=1MHz
Crss Ave (pF)
Coss Ave (pF)
Ciss Ave (pF)
0
2
4
6
8
10
0
2
4
6
8
10
12
14
16
18
20
Qg, TOTAL GATE CHARGE (nC)
VDS=15V, ID=4A
Figure 12 Gate Charge



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