MICROWAVE CORPORATION

6 - 6

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12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

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6

HMC136

GaAs MMIC BI-PHASE

MODULATOR, 4 - 8 GHz

v01.0300

General Description

Features

Functional Diagram

Chip Integrates Directly into MIC Designs

30 dB of Carrier Suppression

Direct Modulation in the 4 - 8 GHz Band

Functions also as a Phase Detector

Typical Applications

The HMC136 is suitable for:

• Wireless Local Loop

• LMDS & VSAT

• Pt. to Pt. Radios

• Test Equipment

The HMC136 Bi-Phase Modulator is designed to

phase-modulate an RF signal into reference and 180

degree states. Device input is at the RF port and output

is at the LO port. The polarity of the bias current at the

control port (IF port) defines the phase states. Excellent

amplitude and phase balance provided by closely

matched monolithic balun and diode circuits delivers

30 dB of carrier suppression in a tiny monolithic chip.

The device also functions as a demodulator or

phase comparator. As a demodulator, data emerges

at the control port when a modulated signal at the

RF port is compared to a reference signal at the

LO port. As a phase comparator, the phase angle

between two signals applied to the RF and LO ports

is represented by an analog voltage at the control port.

Except for carrier suppression, the data presented

here was measured under static conditions in which

a DC bias current (nominally 5 mA) is applied to the

control port.

Parameter

Min.

Typ.

Max.

Units

Frequency Band

4 - 8

GHz

Insertion Loss

810

dB

Return Loss, RF and LO Ports

2.5

3.0

dB

Amplitude Balance

0.1

0.5

dB

Phase Balance

4.0

6.0

deg

Carrier Supression (When driven with a 1 MHz square wave, 1.4 Vp-p)

25

30

dBc

Input Power for 1 dB Compression

4

8

dBm

Third Order Intercept, Input

10

15

dBm

Second Order Intercept, Input

25

35

dBm

Bias Current (Bias current forward biases internal Schottky diodes providing approximately 0.6 V

at the control port).

2

5

10

mA