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LM5026SD Datasheet(PDF) 13 Page - Texas Instruments |
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LM5026SD Datasheet(HTML) 13 Page - Texas Instruments |
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13 / 39 page ![]() PWM VCC OUT_A PGND LM5026 OUT_A OUT_B OUT_A OUT_B K1 * RSET N-Channel Active Clamp (RSET to REF) P-Channel Active Clamp (RSET to GND) K2 * RSET K1 * RSET K2 * RSET LM5026 www.ti.com SNVS363E – AUGUST 2005 – REVISED NOVEMBER 2015 Feature Description (continued) Figure 14. PWM Output Phasing / Timing The rising edge overlap or deadtime and the falling edge overlap or deadtime are identical and are independent of operating frequency or duty cycle. The magnitude of the overlap/deadtime can be calculated in Equation 1 and Equation 2: Overlap Time = 2.8 × RSET + 2 where • RSET in kΩ • overlap is in ns (1) . Deadtime = 2.9 × RSET + 14 where • RSET in kΩ • deadtime is in ns (2) 7.3.4 Gate Driver Outputs The LM5026 provides two-gate driver outputs, the main power switch control (OUT_A) and the active clamp switch control (OUT_B). The main gate driver features a compound configuration, consisting of both MOS and bipolar devices, which provide superior gate drive characteristics. The bipolar device provides most of the drive current capability and sinks a relatively constant current, which is ideal for driving large-power MOSFETs. As the switching event nears conclusion and the bipolar device saturates, the internal MOS device provides a low impedance to compete the switching event. During turnoff at the Miller plateau region, typically between 2 V to 4 V, the voltage differential between the output and PGND is small and the current source characteristic of the bipolar device is beneficial to reduce the transition time. During turnon, the resistive characteristics of a purely MOS gate driver is adequate since the supply to output voltage differential is fairly large in the Miller region. Figure 15. Compound Gate Driver Copyright © 2005–2015, Texas Instruments Incorporated Submit Documentation Feedback 13 Product Folder Links: LM5026 |
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