MICROWAVE CORPORATION

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12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

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1

Pad Number

Function

Description

Interface Schematic

1

RF Input

This pad is AC coupled and matched to 50 Ohm from 13 - 25 GHz

2

RF Output

This pad is AC coupled and matched to 50 Ohm from 13 - 25 GHz

3

Vdd

Power supply for the 2-stage amplifier. An external RF bypass capacitor

of 100 - 300 pF is required. The bond length to the capacitor should be

as short as possible. The ground side of the capacitor should be con-

nected to the housing ground.

Outline Drawing

HMC342

GaAs MMIC LOW NOISE

AMPLIFIER, 13 - 25 GHz

v00.0301

Absolute Maximum Ratings

Pad Descriptions

NOTES:

1. ALL DIMENSIONS ARE IN INCHES [MM]

2. DIE THICKNESS IS .004”

3. TYPICAL BOND IS .004” SQUARE

4. BACKSIDE METALLIZATION: GOLD

5. BOND PAD METALLIZATION: GOLD

6. BACKSIDE METAL IS GROUND.

7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.

Drain Bias Voltage (Vdd)

+5.5 Vdc

RF Input Power (RFin)(Vdd = +3.0 Vdc)

0 dBm

Channel Temperature

175 °C

Continuous Pdiss (T = 85 °C)

(derate 3.62 mW/°C above 85 °C)

0.326 W

Thermal Resistance

(channel to die bottom)

276 °C/W

Storage Temperature

-65 to +150 °C

Operating Temperature

-55 to +85 °C