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MB9B110T Datasheet(PDF) 115 Page - SPANSION |
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MB9B110T Datasheet(HTML) 115 Page - SPANSION |
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115 / 129 page  Da t a S h e e t 112 MB9B110T-DS706-00016-3v0-E, January 31, 2014 CONFIDENTIAL 7. Flash Memory Write/Erase Characteristics (1) Write / Erase time (Vcc = 2.7V to 5.5V, Ta = - 40°C to + 85°C) Parameter Value Unit Remarks Typ* Max* Sector erase time Large Sector 0.7 3.7 s Includes write time prior to internal erase Small Sector 0.3 1.1 Half word (16-bit) write time 12 384 μs Not including system-level overhead time. Chip erase time 13.6 68 s Includes write time prior to internal erase *: The typical value is immediately after shipment, the maximam value is guarantee value under 100,000 cycle of erase/write. (2) Write cycles and data hold time Erase/write cycles (cycle) Data hold time (year) Remarks 1,000 20* 10,000 10* 100,000 5* *: At average + 85°C |
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