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MMBT2222 Datasheet(PDF) 2 Page - Diotec Semiconductor

Part # MMBT2222
Description  Surface mount Si-Epitaxial PlanarTransistors
PDF  2 Pages
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Manufacturer  DIOTEC [Diotec Semiconductor]
Direct Link  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

MMBT2222 Datasheet(HTML) 2 Page - Diotec Semiconductor

  MMBT2222 Datasheet HTML 1Page - Diotec Semiconductor MMBT2222 Datasheet HTML 2Page - Diotec Semiconductor  
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1) Tested with pulses t
p = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
2) MMBT2222: I
C = 1 mA, MMBT2222A: IC = 10 mA
3) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2 Kupferbelag (Lötpad) an jedem Anschluß
21
Switching Transistors
MMBT2222, MMBT2222A
Characteristics (T
j = 25°C)
Kennwerte (T
j = 25°C)
Min.
Typ.
Max.
Base saturation voltage – Basis-Sättigungsspannung
1)
I
C = 150 mA, IB = 15 mA
MMBT2222
MMBT2222A
V
BEsat
V
BEsat
600 mV
1.3 V
1.2 V
I
C = 500 mA, IB = 50 mA
MMBT2222
MMBT2222A
V
BEsat
V
BEsat
2.6 V
2 V
DC current gain – Kollektor-Basis-Stromverhältnis
1)
V
CE = 10 V, IC = 0.1 mA
V
CE = 10 V, IC = 1 mA
V
CE = 10 V, IC = 10 mA
V
CE = 10 V, IC = 150 mA
V
CE = 1 V, IC = 150 mA
V
CE = 10 V, IC = 500 mA
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
35
50
75
100
50
40
300
h-Parameters at V
CE = 10V, f = 1 kHz, IC = 1 mA / 10 mA
2)
Small signal current gain
Kleinsignal-Stromverstärkung
MMBT2222
MMBT2222A
h
fe
h
fe
50
75
300
375
Input impedance
Eingangs-Impedanz
MMBT2222
MMBT2222A
h
ie
h
ie
2 k
0.25 k
8 k
1.25 k
Output admittance
Ausgangs-Leitwert
MMBT2222
MMBT2222A
h
oe
h
oe
5 µS
25 µS
35 µS
200 µS
Gain-Bandwidth Product – Transitfrequenz
V
CE = 10 V, IC = 10 mA, f = 100 MHz
f
T
250 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
V
CB = 10 V, IE = ie = 0, f = 1 MHz
C
CB0
4 pF
8 pF
Emitter-Base Capacitance – Emitter-Basis-Kapazität
V
EB = 0.5 V, IC = ic = 0, f = 1 MHz
C
EB0
20 pF
25 pF
Noise figure – Rauschzahl
V
CE = 10 V, IC = 100 µA,
R
S = 1 k, f = 1 kHz
MMBT2222A
F
4 dB
Switching times – Schaltzeiten
delay time
V
CC = 30 V, - VBE = 0.5 V
I
C = 150 mA, IB1 = 15 mA
t
d
10 ns
rise time
t
r
25 ns
storage time
V
CC = 30 V, IC = 150 mA
I
B1 = - IB2 = 15 mA
t
s
225 ns
fall time
t
f
60 ns
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
R
thA
420 K/W
3)
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
MMBT2907, MMBT2907A
Marking - Stempelung
MMBT2222 = (M)1B
MMBT2222A = 1P



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