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MMBT2222 Datasheet(PDF) 2 Page - Diotec Semiconductor |
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MMBT2222 Datasheet(HTML) 2 Page - Diotec Semiconductor |
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2 / 2 page ![]() 1) Tested with pulses t p = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% 2) MMBT2222: I C = 1 mA, MMBT2222A: IC = 10 mA 3) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm 2 Kupferbelag (Lötpad) an jedem Anschluß 21 Switching Transistors MMBT2222, MMBT2222A Characteristics (T j = 25°C) Kennwerte (T j = 25°C) Min. Typ. Max. Base saturation voltage – Basis-Sättigungsspannung 1) I C = 150 mA, IB = 15 mA MMBT2222 MMBT2222A V BEsat V BEsat – 600 mV – – 1.3 V 1.2 V I C = 500 mA, IB = 50 mA MMBT2222 MMBT2222A V BEsat V BEsat – – – – 2.6 V 2 V DC current gain – Kollektor-Basis-Stromverhältnis 1) V CE = 10 V, IC = 0.1 mA V CE = 10 V, IC = 1 mA V CE = 10 V, IC = 10 mA V CE = 10 V, IC = 150 mA V CE = 1 V, IC = 150 mA V CE = 10 V, IC = 500 mA h FE h FE h FE h FE h FE h FE 35 50 75 100 50 40 – – – – – – – – – 300 – – h-Parameters at V CE = 10V, f = 1 kHz, IC = 1 mA / 10 mA 2) Small signal current gain Kleinsignal-Stromverstärkung MMBT2222 MMBT2222A h fe h fe 50 75 – – 300 375 Input impedance Eingangs-Impedanz MMBT2222 MMBT2222A h ie h ie 2 k Ω 0.25 k Ω – – 8 k Ω 1.25 k Ω Output admittance Ausgangs-Leitwert MMBT2222 MMBT2222A h oe h oe 5 µS 25 µS – – 35 µS 200 µS Gain-Bandwidth Product – Transitfrequenz V CE = 10 V, IC = 10 mA, f = 100 MHz f T 250 MHz – – Collector-Base Capacitance – Kollektor-Basis-Kapazität V CB = 10 V, IE = ie = 0, f = 1 MHz C CB0 – 4 pF 8 pF Emitter-Base Capacitance – Emitter-Basis-Kapazität V EB = 0.5 V, IC = ic = 0, f = 1 MHz C EB0 – 20 pF 25 pF Noise figure – Rauschzahl V CE = 10 V, IC = 100 µA, R S = 1 kΩ, f = 1 kHz MMBT2222A F – – 4 dB Switching times – Schaltzeiten delay time V CC = 30 V, - VBE = 0.5 V I C = 150 mA, IB1 = 15 mA t d – – 10 ns rise time t r – – 25 ns storage time V CC = 30 V, IC = 150 mA I B1 = - IB2 = 15 mA t s – – 225 ns fall time t f – – 60 ns Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft R thA 420 K/W 3) Recommended complementary PNP transistors Empfohlene komplementäre PNP-Transistoren MMBT2907, MMBT2907A Marking - Stempelung MMBT2222 = (M)1B MMBT2222A = 1P |
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