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2SB1284 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SB1284 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor Product Specification isc website:www.iscsemi.cn 1 isc Silicon PNP Darlingtion Power Transistor 2SB1284 DESCRIPTION ·High DC C urrent Gain- : hFE= 1500(Min.)@IC= -5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -100V(Min.) ·Low Collector Saturation Voltage : VCE(sat)= -1.5V(Max)@IC= -5A APPLICATIONS ·High power switching applications. ·Hammer drive, pulse motor drive applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak -15 A IB Base Current-Continuous -0.8 A IBM Base Current-Peak -1.5 A PC Total Power Dissipation @ TC=25℃ 35 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.57 ℃/W |
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