ZXTP07012EFF datasheet(4/7 Pages) DIODES

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ZXTP07012EFF

Document number: DS33727 Rev. 3 - 2

4 of 7

www.diodes.com

January 2016

ZXTP07012EFF

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage

BVCBO

-12

-23

—

IC = -100µA

Collector-Emitter Breakdown Voltage

(Base Open) (Note 11)

BVCEO

-12

-16

—

IC = -10mA

Emitter-Base Breakdown Voltage

BVEBO

-7

-8.4

—

IE = -100µA

Collector-Base Cutoff Current

ICBO

—

-50

-20

µA

VCB = -10V

VCB = -10V, TA = +100°C

Emitter-Base Cutoff Current

IEBO

—

-50

VEB = -5.6V

ON CHARACTERISTICS (Note 11)

Static Forward Current Transfer Ratio

hFE

500

400

230

150

750

570

320

210

1500

—

IC = -10mA, VCE = -2V

IC = -1A, VCE = -2V

IC = -4A, VCE = -2V

IC = -6A, VCE = -2V

Collector-Emitter Saturation Voltage

VCE(SAT)

—

-80

-60

-130

-250

-260

-100

-75

-165

-350

-340

IC = -0.5A, IB = -2.5mA

IC = -1A, IB = -100mA

IC = -1A, IB = -5mA

IC = -2A, IB = -10mA

IC = -4A, IB = -80mA

Base-Emitter Saturation Voltage

VBE(SAT)

—

-945

-1050

IC = -4A, IB = -80mA

Base-Emitter On Voltage

VBE(ON)

—

-850

-950

IC = -4A, VCE = -2V

SMALL SIGNAL CHARACTERISTICS

Transition Frequency

100

250

—

MHz

IC = -50mA, VCE = -5V,

f = 50MHz

Input Capacitance

CIBO

—

223

—

VEB = -0.5V, f = 1MHz

Output Capacitance

COBO

—

VCB = -8V, f = 1MHz

Delay Time

—

12.8

—

VCC = -10V,

IC = -500mA,

IB1 = IB2 = -50mA

Rise Time

—

15.6

—

Storage Time

—

240

—

Fall Time

—

92.8

—

Note:

11. Measured under pulsed conditions. Pulse width

≤ 300µs. Duty cycle ≤ 2%

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