| Electronic Components Datasheet Search |
|
2SD879 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
|
|
|||||||||||||||||||||||||||||
2SD879 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
|
2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn isc & iscsemi is registered trademark 2 isc Silicon NPN Power Transistor 2SD879 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCBO Collector-Base Voltage IC=10µA, IE=0 30 V VCEO Collector-Emitter Voltage IC=1mA, RBE=∞ 10 V VCEX Collector-Emitter Voltage IC=1mA, VBE=3V 20 V VEBO Emitter-Base Voltage IE=10µA, IC=0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3.0A; IB= 60mA(pulse) 0.4 V ICBO Collector Cutoff Current VCB= 20V; IE= 0 1.0 μ A IEBO Emitter Cutoff Current VEB= 4V; IC= 0 1.0 μ A hFE DC Current Gain IC= 3A(pulse) ; VCE= 2V 140 fT Current-Gain—Bandwidth Product IC= 0.05A ; VCE= 10V 200 MHz COB Output Capacitance IE= 0 ; VCB= 10V,ftest= 1MHz 30 pF |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |