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2SD879 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SD879 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor 2SD879 DESCRIPTION · High Collector Current-IC= 3.0A · Low Saturation Voltage - : VCE(sat)= 0.4V(Max)@ IC= 3.0A, IB= 60mA(Pulse) · Excellent Linearity of hFE in The Region From Low Current to High Current. APPLICATIONS · In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 10 V VCEX Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3.0 A ICP Collector Current-Pulse 5.0 A PC Collector Power Dissipation 1.0 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
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