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CTL0402PS-R3 Datasheet(PDF) 4 Page - CT Micro International Corporation |
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CTL0402PS-R3 Datasheet(HTML) 4 Page - CT Micro International Corporation |
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4 / 11 page ![]() CT Micro Rev 1 Proprietary & Confidential Page 4 Nov, 2013 CTL0402PS-R3 P-Channel Enhancement MOSFET Drain-Source Diode Characteristics Symbol Parameters Test Conditions Min Typ Max Units Notes VSD Body Diode Forward Voltage VGS = 0V, ID = -1.2A - -0.8 - V ISD Body Diode Continuous Current - - -1.2 A 1 Note: 1. The power dissipation is limited by 150℃ junction temperature. 2. Device mounted on a glass-epoxy board 3. The data tested by pulsed , pulse width ≦ 300μs , duty cycle ≦ 2% 4. Thermal Resistance follow JESD51-3. FR-4 25.4 × 25.4 mm . 2 Oz Copper Actual Size |
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