CTL0402PS-R3 datasheet(3/11 Pages) CTMICRO

3 / 11 page

CT Micro

Rev 1

Proprietary & Confidential

Page 3

Nov, 2013

CTL0402PS-R3

P-Channel Enhancement MOSFET

Electrical Characteristics T

A = 25°C (unless otherwise specified)

Static Characteristics

Symbol

Parameters

Test Conditions

Min

Typ

Max

Units

Notes

BVDSS

Drain-Source Breakdown Voltage

VGS= 0V, ID= -

250μA

-20

IDSS

Drain-Source Leakage Current

VDS = -20V, VGS = 0V

-1

µ A

IGSS

Gate-Source Leakage Current

VGS = ±8V, VDS = 0V

±100

On Characteristics

Symbol

Parameters

Test Conditions

Min

Typ

Max

Units

Notes

RDS(ON)

Drain-Source On-Resistance

VGS = -10V, ID = -4.2A

mΩ

VGS = -4.5V, ID = -3.4A

mΩ

VGS = -2.5V, ID = -2.5A

mΩ

VGS = -1.8V, ID = -1.7A

120

mΩ

VGS(th)

Gate-Source Threshold Voltage

VGS = VDS, I ID =-

250μA

-0.4

---

-1.0

Dynamic Characteristics

Symbol

Parameters

Test Conditions

Min

Typ

Max

Units

Notes

CISS

Input Capacitance

VGS =0V,

VDS=-10V,

f=1MHz

745

COSS

Output Capacitance

VDS =-15V

CRSS

Reverse Transfer Capacitance

f=1MHz

Switching Characteristics

Symbol

Parameters

Test Conditions

Min

Typ

Max

Units

Notes

TD(ON)

Turn-On Delay Time

VDS = -15V ,

VGS = -10V,

RG =

6Ω,

RL= 15

Ω,

Rise Time

TD(OFF)

Turn-Off Delay Time

Fall Time

4.5

Total Gate Charge

VDS = -15V ,

QGS

Gate-Source Charge

VGS = -4.5V,

2.8

QGD

Gate-Drain Charge

ID = -4.2A

2.5

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