Parameter

Typ.

Max.

Units

Maximum Junction-to-Ambient

ƒ

75

100

°C/W

IRLML2502

These N-Channel MOSFETs from International Rectifier

utilize advanced processing techniques to achieve extremely

low on-resistance per silicon area. This benefit, combined

with the fast switching speed and ruggedized device design

the designer with an extremely efficient and reliable device

for use in battery and load management.

A thermally enhanced large pad leadframe has been

incorporated into the standard SOT-23 package to produce

a HEXFET Power MOSFET with the industry's smallest

footprint. This package, dubbed the Micro3

, is ideal for

applications where printed circuit board space is at a

premium. The low profile (<1.1mm) of the Micro3 allows it

to fit easily into extremely thin application environments

such as portable electronics and PCMCIA cards. The thermal

resistance and power dissipation are the best available.

Thermal Resistance

Description

04/30/03

www.irf.com

1

Parameter

Max.

Units

Drain- Source Voltage

20

V

4.2

3.4

A

Pulsed Drain Current



33

Power Dissipation

1.25

Power Dissipation

0.8

Linear Derating Factor

0.01

W/°C

Gate-to-Source Voltage

± 12

V

Junction and Storage Temperature Range

-55 to + 150

°C

Absolute Maximum Ratings

W

Micro3



D

S

G

3

1

2

PD - 93757C