IXYS Corporation

3540 Bassett Street, Santa Clara,CA 95054

Tel: 408-982-0700

Fax: 408-496-0670

IXYS Semiconductor

Edisonstr. 15, D-68623 Lampertheim, Germany

Tel: +49-6206-5030

Fax: +49-6206-503629

I

XYS reserves the right to change limits, test conditions, and dimensions.

IXTH 6N80

IXTH6N80A

IXTM6N80

IXTM6N80A

T

-50

-25

0

25

50

75

100

125

150

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

BV

CES

V

GS(th)

T

-50

-25

0

25

50

75

100

125

150

0

1

2

3

4

5

6

7

T

-50

-25

0

25

50

75

100

125

150

0.50

0.75

1.00

1.25

1.50

1.75

2.00

2.25

2.50

I

0

246

8

10

1.8

2.0

2.2

2.4

2.6

2.8

3.0

V

3.0 3.5 4.0 4.5

5.0 5.5 6.0 6.5 7.0 7.5

0

1

2

3

4

5

6

7

8

9

V

0

5

10

15

20

25

30

0

1

2

3

4

5

6

7

8

9

6V

V

6N80

7V

T

T

T

V

V

I

6N80A

Fig. 1 Output Characteristics

Fig. 2 Input Admittance

Fig. 3 R

Fig. 4 Temperature Dependence

of Drain to Source Resistance

Fig. 5 Drain Current vs.

Fig. 6 Temperature Dependence of

Case Temperature

Breakdown and Threshold Voltage