IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961 5,187,117 5,486,715

4,850,072

4,931,844

5,034,796

5,063,307 5,237,481 5,381,025

IXTH 6N80

IXTH6N80A

IXTM6N80

IXTM6N80A

V

1

10

100

1000

0.1

1

10

Gate Charge - nCoulombs

0

102030

4050607080

0

1

2

3

4

5

6

7

8

9

10

V

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

0

1

2

3

4

5

6

7

8

9

V

0

5

10

15

20

25

0

250

500

750

1000

1250

1500

1750

2000

2250

2500

2750

Time - Seconds

0.00001

0.0001

0.001

0.01

0.1

1

10

0.001

0.01

0.1

1

C

oss

C

iss

V

I

I

Limited by R

DS(on)

10us

100us

1ms

10ms

100ms

Single Pulse

C

rss

f = 1 MHz

V

T

T

D=0.5

D=0.05

D=0.02

D=0.1

D=0.01

D=0.2

Fig.7 Gate Charge Characteristic Curve

Fig.8 Forward Bias Safe Operating Area

Fig.11 Transient Thermal Impedance

Fig.9 Capacitance Curves

Fig.10 Source Current vs. Source

to Drain Voltage