AT45CS1282 datasheet(5/33 Pages) ATMEL

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AT45CS1282 [Preliminary]

3447A–DFLSH–2/04

Program and Erase Commands

BUFFER WRITE: Data can be clocked in from the input pins (SI or I/O7 - I/O0) into

either buffer 1 or buffer 2. To load data into either buffer, a 1-byte opcode, 84H for buffer

1 or 87H for buffer 2, must be clocked into the device, followed by four address bytes

comprised of 21 don’t care bits and 11 buffer address bits (BFA10 - BFA0). The 11

buffer address bits specify the first byte in the buffer to be written. After the last address

byte has been clocked into the device, data can then be clocked in on subsequent clock

cycles. If the end of the data buffer is reached, the device will wrap around back to the

beginning of the buffer. Data will continue to be loaded into the buffer until a low-to-high

transition is detected on the CS pin.

BUFFER TO MAIN MEMORY PAGE PROGRAM: A previously-erased page within main

memory can be programmed with the contents of either buffer 1 or buffer 2. The pro-

gramming time is selectable by the system through the use of different opcodes

between a normal mode and a fast mode (the fast program option will consume more

current). A 1-byte opcode, 88H for buffer 1 or 89H for buffer 2 (98H for buffer 1 fast pro-

gram or 99H for buffer 2 fast program), must be clocked into the device followed by four

address bytes consisting of 7 don’t care bits, 14-page address bits (PA13 - PA0) that

specify the page in the main memory to be written and 11 don’t care bits. When a low-to-

high transition occurs on the CS pin, the part will program the data stored in the buffer

into the specified page in the main memory. It is necessary that the page in main mem-

ory that is being programmed has been previously erased using the sector erase

commands. The programming of the page is internally self-timed and should take place

in a maximum time of t

P for normal programming or tFP for fast programming. During this

time, the status register and the RDY/BUSY pin will indicate that the part is busy.

SECTOR ERASE: The Sector Erase command can be used to individually erase any

sector in the main memory. There are 65 sectors and only one sector can be erased at

one time. Sector 0a requires a different opcode than sectors 0b-63. To perform a sector

0a erase, an opcode of 50h must be loaded into the device, followed by four address

bytes comprised of 7 don’t care bits, 11-page address bits (PA13 - PA3) and 14 don’t

care bits. To perform a sector 0b-63 erase, an opcode of 7Ch must be loaded into the

device, followed by four address bytes comprised of 7 don’t care bits, 6-page address

bits (PA13 - PA8) and 19 don’t care bits. The 6-page address bits are used to specify

which sector is to be erased. Refer to Sector Erase addressing table. When a low-to-

high transition occurs on the CS pin, the part will erase the selected sector. The erase

operation is internally self-timed and should take place in a maximum time of t

SE. During

this time, the status register and the RDY/BUSY pin will indicate that the part is busy.

AT45CS1282 Datasheet(PDF) 5 Page - ATMEL Corporation