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BUV61 Datasheet(PDF) 1 Page - STMicroelectronics |
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BUV61 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 5 page ![]() BUV61 HIGH POWER NPN SILICON TRANSISTOR s NPN TRANSISTOR s HIGH CURRENT CAPABILITY s FAST SWITCHING SPEED s FULLY CHARACTERIZED AT 125 oC APPLICATION s SWITCHING REGULATORS s MOTOR CONTROL DESCRIPTION The BUV61 is a Multi-Epitaxial planar NPN transistor in TO-3 metal case. It is intented for use in high frequency and efficiency converters such us motor controllers and industrial equipment. INTERNAL SCHEMATIC DIAGRAM October 2003 1 2 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCEV Collector-emitter Voltage (VBE = -1.5V) 300 V VCEO Collector-emitter Voltage (IB = 0) 200 V VEBO Emitter-Base Voltage (IC = 0) 7 V IC Collector Current 50 A ICM Collector Peak Current 75 A IB Base Current 8 A IBM Base Peak Current 15 A PBase Reverse Bias Base Dissipation (B.E. junction in avalanche) 2W Ptot Total Power Dissipation at Tcase < 25 oC 250 W Tstg Storage Temperature -65 to 200 oC Tj Max Operating Junction Temperature 200 oC TO-3 (version " S ") ® 1/5 |
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Similar Description - BUV61 |
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