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BUV61 Datasheet(PDF) 3 Page - STMicroelectronics

Part # BUV61
Description  HIGH POWER NPN SILICON TRANSISTOR
PDF  5 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

BUV61 Datasheet(HTML) 3 Page - STMicroelectronics

  BUV61 Datasheet HTML 1Page - STMicroelectronics BUV61 Datasheet HTML 2Page - STMicroelectronics BUV61 Datasheet HTML 3Page - STMicroelectronics BUV61 Datasheet HTML 4Page - STMicroelectronics BUV61 Datasheet HTML 5Page - STMicroelectronics  
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ELECTRICAL CHARACTERISTICS (continued)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tr
ts
tf
RESISTIVE LOAD
Rise Time
Storage Time
Fall Time
VCC = 160V
IC = 40A
VBB = -5V
IB1 = 5A
RB2 = 0.5
Ω
Tp = 30
µs
0.55
0.6
0.07
0.7
1.2
0.3
µs
µs
µs
ts
tf
tt
tc
INDUCTIVE LOAD
Storage Time
Fall Time
Tail Time in Turn-on
Crossover Time
VCC = 160V
Vclamp = 200V
IC
= 25A
IB = 2.5A
VBB = -5V
RB2 = 1
Ω
LC = 0.32mH
0.85
0.06
0.01
0.11
1.9
0.15
0.07
0.3
µs
µs
µs
µs
ts
tf
tt
tc
Storage Time
Fall Time
Tail Time in Turn-on
Crossover Time
VCC = 160V
Vclamp = 200V
IC
= 25A
IB = 2.5A
VBB = -5V
RB2 = 1
Ω
LC = 0.32mH
Tj = 100
oC
1.1
0.08
0.02
0.15
2.4
0.25
0.15
0.5
µs
µs
µs
µs
ts
tf
tt
Storage Time
Fall Time
Tail Time in Turn-on
VCC = 160V
Vclamp = 200V
IC
= 25A
IB = 2.5A
VBB = 0
RB2 = 2.7
Ω
LC = 0.32mH
1.6
0.7
0.2
µs
µs
µs
ts
tf
tt
Storage Time
Fall Time
Tail Time in Turn-on
VCC = 160V
Vclamp = 200V
IC
= 25A
IB = 2.5A
VBB = 0
RB2 = 2.7
Ω
LC = 0.32mH
Tj = 100
oC
2.7
1
0.3
µs
µs
µs
∗ Pulsed: Pulse duration = 300 µs, duty cycle = 2 %
BUV61
3/5



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