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LM4782 Datasheet(PDF) 16 Page - National Semiconductor (TI) |
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LM4782 Datasheet(HTML) 16 Page - National Semiconductor (TI) |
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16 / 26 page ![]() Typical Performance Characteristics (Continued) Safe Area SPiKe Protection Response 20081108 20081109 Note 17: Bridge mode graphs were taken using the demo board and inverting the signal to the channel 3 input. Note 18: Parallel mode graphs were taken using the demo board connecting each output through a 0.1 Ω/3W resistor to the load. Application Information MUTE MODE By placing a logic-high voltage on the mute pins, the signal going into the amplifiers will be muted. If the mute pins are connected to a logic-low voltage, the amplifiers will be in a non-muted state. There are three mute pins, one for each amplifier, so that one channel can be muted without muting the other if the application requires such a configuration. Refer to the Typical Performance Characteristics section for curves concerning Mute Attenuation vs Mute Pin Voltage. STANDBY MODE The standby mode of the LM4782 allows the user to drasti- cally reduce power consumption when the amplifiers are idle. By placing a logic-high voltage on the standby pins, the amplifiers will go into Standby Mode. In this mode, the current drawn from the V CC supply is typically less than 30µA total for all amplifiers. The current drawn from the V EE supply is typically 8mA. Clearly, there is a significant reduction in idle power consumption when using the standby mode. There are three Standby pins, so that one channel can be put in standby mode without putting the other amplifier in standby if the application requires such flexibility. Refer to the Typical Performance Characteristics section for curves showing Supply Current vs. Standby Pin Voltage for both supplies. UNDER-VOLTAGE PROTECTION Upon system power-up, the under-voltage protection cir- cuitry allows the power supplies and their corresponding capacitors to come up close to their full values before turning on the LM4782. Since the supplies have essentially settled to their final value, no DC output spikes occur. At power down, the outputs of the LM4782 are forced to ground before the power supply voltages fully decay preventing transients on the output. OVER-VOLTAGE PROTECTION The LM4782 contains over-voltage protection circuitry that limits the output current while also providing voltage clamp- ing. The clamp does not, however, use internal clamping diodes. The clamping effect is quite the same as diodes because the output transistors are designed to work alter- nately by sinking large current spikes. SPiKe PROTECTION The LM4782 is protected from instantaneous peak- temperature stressing of the power transistor array. The Safe Operating graph in the Typical Performance Characteris- tics section shows the area of device operation where SPiKe Protection Circuitry is not enabled. The SPiKe Pro- tection Response waveform graph shows the waveform dis- tortion when SPiKe is enabled. Please refer to AN-898 for more detailed information. THERMAL PROTECTION The LM4782 has a sophisticated thermal protection scheme to prevent long-term thermal stress of the device. When the temperature on the die exceeds 150˚C, the LM4782 shuts down. It starts operating again when the die temperature drops to about 145˚C, but if the temperature again begins to rise, shutdown will occur again above 150˚C. Therefore, the device is allowed to heat up to a relatively high temperature if the fault condition is temporary, but a sustained fault will cause the device to cycle in a Schmitt Trigger fashion be- tween the thermal shutdown temperature limits of 150˚C and 145˚C. This greatly reduces the stress imposed on the IC by thermal cycling, which in turn improves its reliability under sustained fault conditions. Since the die temperature is directly dependent upon the heat sink used, the heat sink should be chosen so that thermal shutdown is not activated during normal operation. Using the best heat sink possible within the cost and space constraints of the system will improve the long-term reliability of any power semiconductor device, as discussed in the Determining the Correct Heat Sink section. DETERMlNlNG MAXIMUM POWER DISSIPATION Power dissipation within the integrated circuit package is a very important parameter requiring a thorough understand- ing if optimum power output is to be obtained. An incorrect maximum power dissipation calculation may result in inad- equate heat sinking causing thermal shutdown and thus limiting the output power. www.national.com 16 |
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