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DSEC30-06 Datasheet(PDF) 1 Page - IXYS Corporation

Part # DSEC30-06
Description  HiPerFREDTM Epitaxial Diode with common cathode and soft recovery
PDF  2 Pages
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

DSEC30-06 Datasheet(HTML) 1 Page - IXYS Corporation

  DSEC30-06 Datasheet HTML 1Page - IXYS Corporation DSEC30-06 Datasheet HTML 2Page - IXYS Corporation  
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© 2004 IXYS All rights reserved
1 - 2
IXYS reserves the right to change limits, test conditions and dimensions.
DSEC 30-06B
I
FAV
= 2x15 A
V
RRM = 600 V
t
rr
= 25 ns
V
RSM
V
RRM
Type
V
V
600
600
DSEC 30-06B
Features
• International standard package
• Planar passivated chips
• Very short recovery time
• Extremely low switching losses
• Low I
RM-values
• Soft recovery behaviour
• Epoxy meets UL 94V-0
Applications
• Antiparallel diode for high frequency
switching devices
• Antisaturation diode
• Snubber diode
• Free wheeling diode in converters
and motor control circuits
• Rectifiers in switch mode power
supplies (SMPS)
• Inductive heating
• Uninterruptible power supplies (UPS)
• Ultrasonic cleaners and welders
Advantages
• Avalanche voltage rated for reliable
operation
• Soft reverse recovery for low EMI/RFI
• Low I
RM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Dimensions see Outlines.pdf
HiPerFREDTM Epitaxial Diode
with common cathode and soft recovery
Pulse test:
① Pulse Width = 5 ms, Duty Cycle < 2.0 %
② Pulse Width = 300 µs, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified.
A = Anode, C = Cathode, TAB = Cathode
TO-247 AD
C
A
A
C (TAB)
AC
A
Symbol
Conditions
Maximum Ratings
I
FRMS
50
A
I
FAVM
T
C = 135°C; rectangular, d = 0.5
15
A
I
FSM
T
VJ = 45°C; tp = 10 ms (50 Hz), sine
110
A
E
AS
T
VJ = 25°C; non-repetitive; IAS = 1 A;
L = 100 µH
0.1
mJ
L = 20 mH
20
mJ
I
AR
V
A = 1.5·VR typ.; f = 10 kHz; repetitive
0.1
A
T
VJ
-55...+175
°C
T
VJM
175
°C
T
stg
-55...+150
°C
P
tot
T
C = 25°C
95
W
M
d
mounting torque
0.8...1.2
Nm
Weight
typical
6
g
Symbol
Conditions
Characteristic Values
typ.
max.
I
R
①
T
VJ =
25°C; V
R = VRRM
100
µA
T
VJ = 150°C; VR = VRRM
0.5
mA
V
F
②
I
F = 15 A;
T
VJ = 150°C
1.54
V
T
VJ =
25°C
2.51
V
R
thJC
1.6
K/W
R
thCH
0.25
K/W
t
rr
I
F = 1 A; -di/dt = 100 A/µs;
25
30
ns
V
R = 30 V; TVJ = 25°C
I
RM
V
R = 100 V;
I
F = 25 A; -diF/dt = 100 A/µs
2.6
A
T
VJ = 100°C


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