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DSEC30-06 Datasheet(PDF) 1 Page - IXYS Corporation |
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DSEC30-06 Datasheet(HTML) 1 Page - IXYS Corporation |
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1 / 2 page ![]() © 2004 IXYS All rights reserved 1 - 2 IXYS reserves the right to change limits, test conditions and dimensions. DSEC 30-06B I FAV = 2x15 A V RRM = 600 V t rr = 25 ns V RSM V RRM Type V V 600 600 DSEC 30-06B Features • International standard package • Planar passivated chips • Very short recovery time • Extremely low switching losses • Low I RM-values • Soft recovery behaviour • Epoxy meets UL 94V-0 Applications • Antiparallel diode for high frequency switching devices • Antisaturation diode • Snubber diode • Free wheeling diode in converters and motor control circuits • Rectifiers in switch mode power supplies (SMPS) • Inductive heating • Uninterruptible power supplies (UPS) • Ultrasonic cleaners and welders Advantages • Avalanche voltage rated for reliable operation • Soft reverse recovery for low EMI/RFI • Low I RM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Dimensions see Outlines.pdf HiPerFREDTM Epitaxial Diode with common cathode and soft recovery Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 % ② Pulse Width = 300 µs, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified. A = Anode, C = Cathode, TAB = Cathode TO-247 AD C A A C (TAB) AC A Symbol Conditions Maximum Ratings I FRMS 50 A I FAVM T C = 135°C; rectangular, d = 0.5 15 A I FSM T VJ = 45°C; tp = 10 ms (50 Hz), sine 110 A E AS T VJ = 25°C; non-repetitive; IAS = 1 A; L = 100 µH 0.1 mJ L = 20 mH 20 mJ I AR V A = 1.5·VR typ.; f = 10 kHz; repetitive 0.1 A T VJ -55...+175 °C T VJM 175 °C T stg -55...+150 °C P tot T C = 25°C 95 W M d mounting torque 0.8...1.2 Nm Weight typical 6 g Symbol Conditions Characteristic Values typ. max. I R ① T VJ = 25°C; V R = VRRM 100 µA T VJ = 150°C; VR = VRRM 0.5 mA V F ② I F = 15 A; T VJ = 150°C 1.54 V T VJ = 25°C 2.51 V R thJC 1.6 K/W R thCH 0.25 K/W t rr I F = 1 A; -di/dt = 100 A/µs; 25 30 ns V R = 30 V; TVJ = 25°C I RM V R = 100 V; I F = 25 A; -diF/dt = 100 A/µs 2.6 A T VJ = 100°C |
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