BB207 datasheet(2/7 Pages) PHILIPS

2 / 7 page

9397 750 13003

Product data sheet

Rev. 02 — 27 April 2004

2 of 7

Philips Semiconductors

BB207

FM variable capacitance double diode

Marking

[1]

* = p: made in Hong Kong.

* = w: made in China.

Limiting values

Characteristics

Table 3:

Marking

Type number

Marking code [1]

BB207

*13

Table 4:

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Per diode

continuous reverse voltage

continuous forward current

Tstg

storage temperature

−55

+150

°C

junction temperature

−55

+125

°C

Table 5:

Electrical Characteristics

Tj = 25 °C unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per diode

reverse current

VR = 15 V; see Figure 2

−−

VR =15V; Tj =85 °C; see Figure 2

−−

200

diode series resistance

f = 100 MHz; VR =3V

−

0.2

0.4

Ω

diode capacitance

VR = 1 V; f = 1 MHz; see Figure 1

VR = 3 V; f = 1 MHz; see Figure 1

−

50.5

−

VR = 7.5 V; f = 1 MHz; see Figure 1

25.5

27.6

29.7

VR = 8 V; f = 1 MHz; see Figure 1

−

26.3

−

capacitance ratio

f = 1 MHz

2.6

−

3.3

d1V

()

d 7.5V

()

--------------------

BB207 Datasheet(PDF) 2 Page - NXP Semiconductors

BB207 Datasheet(HTML) 2 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7

Datasheet Download

Link URL