DMN3018SSD datasheet(1/6 Pages) DIODES

Part #	DMN3018SSD

Description	Low On-Resistance

PDF	6 Pages

Scroll/Zoom	100%

Manufacturer	DIODES [Diodes Incorporated]

Direct Link	http://www.diodes.com

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1 / 6 page

DMN3018SSD

Document number: DS35583 Rev. 3 - 2

1 of 6

www.diodes.com

January 2013

DMN3018SSD

30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

V(BR)DSS

RDS(ON) max

ID max

TA = +25°C

30V

22mΩ @ VGS = 10V

6.7A

30mΩ @ VGS = 4.5V

5.2A

Description

This MOSFET has been designed to minimize the on-state resistance

(RDS(ON)) and yet maintain superior switching performance, making it

ideal for high efficiency power management applications.

Applications

•

Backlighting

•

Power Management Functions

•

DC-DC Converters

Features

•

Low On-Resistance

•

100% UIS (Avalanche) Rated

•

ESD Protected Gate

•

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

•

Halogen and Antimony Free. “Green” Device (Note 3)

•

Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

•

Case: SO-8

•

Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020

•

Terminal Connections Indicator: See diagram

•

Terminals: Finish

⎯ Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

•

Weight: 0.008 grams (approximate)

Ordering Information (Note 4)

Part Number

Case

Packaging

DMN3018SSD-13

SO-8

2500/Tape & Reel

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

SO-8

Top View

Source

Gate

Protection

Diode

Gate

Drain

Body

Diode

Equivalent Circuit per Element

Top View

Pin Configuration

ESD PROTECTED

D1

D2

D1

S2

G2

S1

G1

Top View

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Part no.

Year: “11” = 2011

1

4

8

5

N3018SD

YY WW

Xth week: 01 ~ 53

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