DMN3018SSD datasheet(2/6 Pages) DIODES

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DMN3018SSD

Document number: DS35583 Rev. 3 - 2

2 of 6

www.diodes.com

January 2013

DMN3018SSD

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

±20

Continuous Drain Current (Note 5) VGS = 10V

Steady

State

TA = +25°C

TA = +70°C

6.7

5.3

t < 10s

TA = +25°C

TA = +70°C

8.7

6.9

Pulsed Drain Current (10µs pulse, duty cycle = 1%)

IDM

Maximum Body Diode continuous Current

2.0

Avalanche Current (Note 6) L = 0.1mH

IAR

Repetitive Avalanche Energy (Note 6) L = 0.1mH

EAR

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

1.5

Thermal Resistance, Junction to Ambient (Note 5)

Steady state

RθJA

°C/W

t < 10s

°C/W

Thermal Resistance, Junction to Case (Note 5)

RθJC

14.5

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BVDSS

—

VGS = 0V, ID = 250μA

Zero Gate Voltage Drain Current

IDSS

—

μA

VDS = 24V, VGS = 0V

Gate-Source Leakage

IGSS

—

±10

μA

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

VGS(th)

1.7

2.1

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance

RDS (ON)

—

mΩ

VGS = 10V, ID = 10A

—

VGS = 4.5V, ID = 6A

Forward Transfer Admittance

|Yfs|

—

8.3

—

VDS = 5V, ID = 6.9A

Diode Forward Voltage

VSD

0.5

—

1.2

VGS = 0V, IS = 1A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Ciss

—

697

—

VDS = 15V, VGS = 0V,

f = 1.0MHz

Output Capacitance

Coss

—

Reverse Transfer Capacitance

Crss

—

Gate resistance

—

1.47

—

Ω

VDS = 0V, VGS = 0V, f = 1.0MHz

Total Gate Charge (VGS = 4.5V)

—

6.0

—

VGS = 10V, VDS = 15V,

ID = 9A

Total Gate Charge (VGS = 10V)

—

13.2

—

Gate-Source Charge

Qgs

—

2.2

—

Gate-Drain Charge

Qgd

—

1.8

—

Turn-On Delay Time

tD(on)

—

4.3

—

VDD = 15V, VGS = 10V,

RL = 15Ω, ID = 1A, RG = 6Ω

Turn-On Rise Time

—

4.4

—

Turn-Off Delay Time

tD(off)

—

20.1

—

Turn-Off Fall Time

—

4.1

—

Reverse Recovery Time

trr

—

7.3

—

IF = 9A, di/dt = 500A/μs

Reverse Recovery Charge

Qrr

—

7.9

—

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

6. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

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