DMN3025LSS

Document number: DS35746 Rev. 3 - 2

2 of 6

www.diodes.com

January 2013

© Diodes Incorporated

DMN3025LSS

Characteristic

Symbol

Value

Units

Drain-Source Voltage

30

V

Gate-Source Voltage

±20

V

Steady

State

7.2

5.7

A

t<10s

9.6

7.7

A

Maximum Continuous Body Diode Forward Current (Note 6)

3

A

Pulsed Drain Current (10µs pulse, duty cycle = 1%)

40

A

Avalanche Current (L = 0.1mH)

14.5

A

Repetitive Avalanche Energy (L = 0.1mH)

10.5

mJ

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

1.4

W

0.9

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

87

°C/W

t<10s

44

Total Power Dissipation (Note 6)

1.7

W

1.1

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

73

°C/W

t<10s

37

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

30

—

—

V

Zero Gate Voltage Drain Current

—

—

1

μA

Gate-Source Leakage

—

—

±1

μA

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

0.8

-

2.0

V

Static Drain-Source On-Resistance

—

14

20

mΩ

—

23

31

Forward Transfer Admittance

—

11

-

S

Diode Forward Voltage

—

0.70

1.0

V

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

—

641

—

pF

f = 1.0MHz

Output Capacitance

—

66

—

Reverse Transfer Capacitance

—

50

—

Gate resistance

—

2.2

—

Ω

—

6

—

nC

—

13.2

—

Gate-Source Charge

—

1.7

—

Gate-Drain Charge

—

2.2

—

Turn-On Delay Time

—

3.3

—

ns

Turn-On Rise Time

—

4.4

—

Turn-Off Delay Time

—

22.3

—

Turn-Off Fall Time

—

5.3

—

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.