DMN3025LSS

Document number: DS35746 Rev. 3 - 2

4 of 6

www.diodes.com

January 2013

© Diodes Incorporated

DMN3025LSS

0

0.5

1

1.5

2

2.5

3

-50

-25

0

25

50

75

100 125

150

T , AMBIENT TEMPERATURE (°C)

A

Figure 7 Gate Threshold Variation vs. Ambient Temperature

I = 250µA

D

I = 1mA

D

0

5

10

15

20

25

30

0

0.2

0.4

0.6

0.8

1

1.2

V , SOURCE-DRAIN VOLTAGE (V)

SD

Figure 8 Diode Forward Voltage vs. Current

T = 25°C

A

0.1

1

10

100

1000

10000

010

20

30

V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 9 Typical Drain-Source Leakage Current vs. Voltage

T = 125°C

A

T = 150°C

A

T = 85°C

A

T = 25°C

A

10000

02

46

8

10 12

14

16 18

20

V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 10 Typical Junction Capacitance

f = 1MHz

1000

100

10

Q , TOTAL GATE CHARGE (nC)

Figure 11 Gate-Source Voltage vs. Total Gate Charge

g

0

2

4

6

8

10

0

2

4

6

8

10

12

14

V

=15

I = 10A

DS

D