DMP2007UFG datasheet(2/7 Pages) DIODES

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DMP2007UFG

Document number: DS37943 Rev. 3 - 2

2 of 7

www.diodes.com

October 2015

DMP2007UFG

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Drain-Source Voltage

VDSS

-20

Gate-Source Voltage

VGSS

±12

Continuous Drain Current (Note 5) VGS = -10V

Steady

State

TA = +25°C

TA = +70°C

TC = +25°C

-18.0

-14.5

-40

Pulsed Drain Current (10

μs Pulse, Duty Cycle = 1%)

IDM

-80

Maximum Continuous Body Diode Forward Current (Note 5)

-2.2

Avalanche Current L=0.1mH

IAS

-30

Avalanche Energy L=0.1mH

EAS

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

TA = +25°C

2.3

TC = +25°C

Thermal Resistance, Junction to Ambient

(Note 5)

RθJA

°C/W

(Note 6)

143

Thermal Resistance, Junction to Case

RθJC

3.0

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BVDSS

-20

—

VGS = 0V, ID = -250µA

Zero Gate Voltage Drain Current

IDSS

—

-1

µA

VDS = -16V, VGS = 0V

Gate-Source Leakage

IGSS

—

±100

VGS = 12V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

VGS(TH)

-0.4

—

-1.3

VDS = VGS, ID = -250µA

Static Drain-Source On-Resistance

RDS(ON)

—

4.4

5.5

Ω

VGS = -10V, ID = -15A

—

4.9

7.0

VGS = -4.5V, ID = -15A

—

6.5

9.0

VGS = -2.5V, ID = -10A

Diode Forward Voltage

VSD

—

-0.7

-1.2

VGS = 0V, IS = -10A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Ciss

—

4,621

—

VDS = -10V, VGS = 0V

f = 1.0MHz

Output Capacitance

Coss

—

652

—

Reverse Transfer Capacitance

Crss

—

403

—

Gate Resistance

—

3.2

—

Ω

VDS = 0V, VGS = 0V, f = 1.0MHz

Total Gate Charge (VGS = -4.5V)

—



VDD = -10V, ID = -20A

Total Gate Charge (VGS = -10V)

—

Gate-Source Charge

Qgs

—

8.3

—

Gate-Drain Charge

Qgd

—

9.6

—

Turn-On Delay Time

tD(ON)

—

10.1

—

VGS = -4.5V, VDD = -10V,

RG = 1Ω, ID = -10A

Turn-On Rise Time

—

9.8

—

Turn-Off Delay Time

tD(OFF)

—

Turn-Off Fall Time

—

Reverse Recovery Time

tRR

—

20.1

—

IF = -10A, di/dt = 100A/µs

Reverse Recovery Charge

Qrr

—

10.1

—

IF = -10A, di/dt = 100A/µs

Notes:

5. RθJA is determined with the device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. RθJC is guaranteed by design

while RθJA is determined by the user’s board design.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

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